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BJT Tutorials
   Bipolar Junction Transistor- NPN
   Bipolar Junction Transistor- PNP
   DC Analysis of BJT Circuits
   The BJT as a Signal Amplifier
   BJT Small-Signal Equivalent Circuit Models
   BJT Small-Signal Amplifier
   Graphical Analysis of a BJT Small-Signal Amplifier
   BJT Biasing - Current Mirror
   Common Emitter Amplifier
   Common Base Amplifier
   Common Collector (Emitter Follower) Amplifier
   BJT Internal Capacitances. High Frequency Circuit Model
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Common Base Amplifier

We will cover the second of the three families of BJT amplifiers in this lecture by discussing theCommon_Base_Amplifier shown in Fig. 5.62a:

The small-signal equivalent circuit for this amplifier is shown in Fig. 5.62b (ignoring ro):

As before, let’s determine the small-signal AC characteristics of this amplifier by solving or Rin, Gv, Gi, Ais, and Rout.
• Input resistance, Rin. From direct inspection of the smallsignal equivalent circuit, we see that
Since re is often small (on the order of 20 to 30bita), then Rin of the CB amplifier is very small. Generally this is not desirable, though in the case of certain high frequency amplifiers input impedances near 50 bita is very useful (to reduce so-called “mismatch reflections” at the input).
• Small-signal voltage gain, Gv. We’ll first calculate the partial voltage gain

At the output,
The small-signal emitter current is

Substituting (3) and (4) into (2) gives the partial voltage gain to be

This is the same gain as for the CE amplifier (without ro), except the gain here for the CB amplifier is positive. The overall (from the input to the output) small-signal voltage gain Gv is defined as

We can equivalently write this voltage gain as

with Av given in (5). By simple voltage division at the input to the small-signal equivalent circuit

Substituting this result and (5) into (7) yields the final expression for the overall small-signal voltage gain

Since from (1) Rin= re then Gv simplifies to

If 1 we can interpret this small-signal overall voltage expression in (10) as the ratio of the total resistance in the collector lead to the total resistance in the emitter lead. This gain can be fairly large, though if Rsig is nearly the same size as the total emitter resistance the gain will be small. In other words, if this amplifier is connected to a high output impedance stage, it will be difficult to realize high gain.
• Overall small-signal current gain, Gi. By definition

Using current division at the output of the small-signal equivalent circuit above

Because ii = -ie this expression gives

• Short circuit current gain, Ais. In the case of a short circuit load (RL = 0), Gi in (13) reduces to the short circuit current gain:

• Output resistance, Rout. Referring to the small-signal equivalent circuit above and shorting out the input vsig = 0 Rout= Rc which is the same as the CE amplifier (when ignoring ro). Summary
Summary of the CB small-signal amplifier:
1. Low input resistance.
2. Gv can be very large, though critically dependent on Rsig.
3. Ais= á
4. Potentially large output resistance (dependent on RC). One very important use of the CB amplifier is as a unity-gain current amplifier, which is also called a current buffer amplifier. This type of amplifier accepts an input signal current at a low impedance level and outputs nearly the same current amplitude, but at a high output impedance level. Even though this is a buffer amplifier, there is still power gain.

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example of BJT small signal
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drdo previous papar
preparation for drdo

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Its operation and manufacturing.

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