Examcrazy Logo
MBA in India CAT How to Prepare for Exams Technical Freshers Jobs
  Follow us|  twitter  Orkut  facebook
Diode Tutorials
   Ideal Diodes
   Applications of Diodes
   Physical Operation of Diodes
   DC Analysis of Diode Circuits
   Small-Signal Diode Model and Its Application
   Zener Diodes
   Diode Rectifier Circuits (Half Cycle, Full Cycle, and Bridge)
   Peak Rectifiers
   Limiting and Clamping Diode Circuits. Voltage Doubler. Special Diode Types
Free Electronics Tutorials
   Diode Tutorials
   BJT Tutorials
   MOSFET Tutorials
   Electronics II Tutorials
   Applied Electromagnetics Tutorials
   Microwave Tutorials
GATE preparation tips
   GATE Books & How to prepare
   Objective Solving Tricks
   Other GATE links
   IES exam preparation
   All about DRDO-SET
More Engineering Links
   Directory of coaching Institutes
   Govt engg college rankings
   Private engg college rankings
   Admission notifications for Mtech/PhD
   All Engineering Colleges in India
Physical Operation of Diodes

Real diodes have a more complicated i-v characteristic curve than ideal diodes. As shown in the text for a silicon diode:

The diode has three distinct regions of operation:
1. Forward bias – note that when the diode is “on,” the voltage drop is approximately 0.6 V to 0.7 V for a silicon diode.
2. Reverse bias – in this region i = -IS , where IS is called the saturation current. For “small signal” diodes, IS is often on the order of fA (10-15 A).
3. Breakdown – in this region v » VZK ˜ - for all I, where VZK is called the breakdown knee voltage. This region of operation is useful in certain applications.
In the forward bias region of operation, it can be shown from first principals that

• n = “emission constant.” Typically between 1 and 2.
• VT = kT/q 䤥 mV at room temperature (20°C). Called the “thermal voltage.”
Notice the highly non-linear relationship between i and v in this equation.

which is true for operation in the reverse bias region.
We’ll now take a quick look at the basic semiconductor physics behind the pn junction, and then follow this up with examples and applications.
PN Junction

Semiconductor junction diodes are made by joining two semiconductors together. A pn junction diode is formed by joining a “p-type” semiconductor to an “n-type” semiconductor:

For a silicon diode, both the p and n regions are silicon, but in each of these regions, small amounts of impurities have been added through a process called “doping.” To make p and n regions, we begin with a silicon crystal as shown figure below. These atoms are held together by covalent bonds (sharing pairs of electrons).

At T = 0, the outermost electron (e-) of each atom is held in covalent bonds. No current is possible since no electrons are available to contribute to conduction.
For T > 0, random thermal vibration provides enough energy for some of the e- to break their covalent bonds.
These e- can contribute to conduction current.


When electrons are thermally excited out of covalent bonds, they leave a “vacancy” at the bond site, as illustrated above in Fig. This is called a hole. Interestingly, holes can also contribute to conduction current in a semiconductor material (see the figure below). This movement is usually much slower than e- so the mobility of holes is smaller.

Donors and Acceptors

The concentration of holes and free electrons can be changed in a silicon crystal by adding small amounts of impurities called dopants. This is what makes electronic devices possible!
(1) To create holes, add acceptor dopants to the silicon. For such “p-type” semiconductors, the silicon is doped with trivalent impurity elements such as boron. These impurity atoms displace silicon atoms (having four electrons) with boron atoms (having three electrons).
Consequently, the regular silicon lattice has “holes,” or locations in the lattice that can accept a free electron. This “hole” can also move through the lattice.

(2) To create free electrons, add donor dopants For such “n-type” semiconductors, the silicon is doped with pentavalent impurity elements such as phosphorus. These impurities displace silicon atoms with phosphorous atoms (having five electrons). Consequently, one extra electron is available to move through the silicon lattice.

Be aware that the entire p-type and n-type regions remain charge neutral at all times! The dopant atoms are also charge neutral.
At room temperature, thermal ionization breaks some covalent bonds. In n-type materials we then have free electrons while in p-type materials we have free holes. “p type” means positive charge carriers predominate while “n type” means negative charge carriers predominate.

Depletion Region

Something very special occurs when we place p-type material in contact with n-type material. There now appears to be an “excess” of holes in the p-type material and an “excess” of free electrons in the n type.

Through the mechanism of diffusion (random motion due to thermal agitation), excess holes will migrate to the n-type region while excess free electrons will migrate to the p-type region.
More specifically, when the p- and n-type materials are placed in contact (forming a junction), two things happen near the contact region:
(1) Holes diffuse across the junction (diffuse because the hole concentration is higher in p type) into the n-type region and recombine with majority electrons.
With this electron now “gone,” we have “uncovered” a positive charge from the dopant atom in the n-type region.
This forms a positively charged region.

(2) Similarly, the majority carriers in the n-type region (electrons) diffuse across the junction and recombine with majority holes in the p-type region. This uncovers negative bound charge.

This contact region between the p and n regions now has a bound volume electric charge density. It is called the depletion region. This may seem an unexpected name since only in this region is there a net volume charge density (aka space charge)!
Reverse and Forward Biased Junction There are two important states for a pn junction, the reversed biased and forward biased states:
(1) Reversed biased state:
An electric field E is created in the depletion region because of the “uncovered” charges near the junction:

For the reversed biased state of the pn junction, the electric field produced by the battery Ebattery adds to this electric field of the space charge E in the depletion region. This increases the width of the depletion region.
Consequently, the “majority carriers” cannot flow through the region: holes in the p material are opposed by E in the depletion region, as are electrons in the n material. Hence, little current flows (only the drift current IS) unless the junction breaks down. This occurs when Ebattery is strong enough to strip electrons from the covalent bonds of the atoms, which are then swept across the junction.
(2) Forward biased state:

When V is large enough so that Ebattery > E, then (i) holes are swept from the p to n regions, and (ii) electrons are swept from the n to p regions. We now have current!

Discuss about DIODE here
Discussion Board for DIODE
You can discuss all your issues on DIODE here
Thread / Thread Starter Last Post Replies Views
Type of diode
I need short notes for all type of diode.

Posted By :-
Oct 27, 11:50:24 AM 0 10556
signals and system
hi i am venkatesh which author use in signal and system for gate

Posted By :-
Oct 13, 4:38:08 PM 0 10155
Thank u
i need some links to download free ebooks multiple choice for my gate preparation - V.Vivek Sharma.

Posted By :-
Oct 4, 9:56:42 AM 0 7886
study materials
i want to study materials of digital communication.

Posted By :-
Feb 6, 3:43:05 PM 4 20603
More examples of non linear circuit analysis
Notes are very simple to understand the concepts.

Posted By :-
Sep 9, 3:17:49 PM 0 13768
study materials
can i get some study materials by online

Posted By :-
Sep 4, 9:05:49 AM 0 9958
hiii plz give me basic information about electromegnetics
i have a dout between combination of electrostatics and megnetostatics

Posted By :-
Jul 29, 2:38:13 PM 0 8424
pls send me a link on answered problems on electronic devices and circuit theory by boylestad and nashelsky.. ty

Posted By :-
Jul 25, 11:21:28 PM 0 9535
electronics and communication
i am in 4th year

Posted By :-
Jun 10, 6:02:44 AM 0 8362
about bipolar device

Posted By :-
Feb 13, 2:11:36 PM 2 16240
h parameters of transister
i want h parameters of transister

Posted By :-
Feb 11, 7:52:45 AM 3 22999
very good tutorials
the explanations r very easy to understand

Posted By :-
Dec 7, 8:38:09 PM 0 8609
the explanation was nice...more of these explanations on other topics would be of much help and is expected urgently...

Posted By :-
Dec 2, 10:32:29 PM 0 9297
i want to simple way abt all the diode n jfet

Posted By :-
Jun 4, 10:25:28 AM 1 12655
Thanks for nice tutorials
Thanks for nice tutorials

Posted By :-
Nov 26, 8:29:06 AM 0 8762

To start your new thread you must login here.
New user signup at ExamCrazy.com Exam Crazy
To reply/post a comment you need to login, Use your user name and password to login if you are already registered else register here

(Members Login)

  About us | Privacy Policy | Terms and Conditions | Contact us | Email: support@Examcrazy.com  
Copyright © 2014 Extreme Testing House, India. All rights reserved.  2560