Question:-
72. Which of the following statements about an insulated Gate Bipolar Transistor (IGBT) is NOT true?
Option (A)
The IGBT is developed by combining the characteristics of a BJT and a MOSFET
Option (B)
The on-state losses of an IGBT are lesser then a MOSFET
Option(C)
The IGBT is slower than a BJT
Option(D)
The IGBT contains a parasitic thyristor
Correct Option:
()
question-answer-faq-2572